FDMT80080DC datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* Max rDS(on) = 1.35 mΩ at VGS = 10 V, ID = 36 A
* Max rDS(on) = 1.82 mΩ at VGS = 8 V, ID = 31 A
* Advanced Package and Silicon combination for low rDS(on) an.

Application

* MSL1 robust package design
* OringFET / Load Switching
* 100% UIL tested
* Synchronous Rectificati.

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching pe.

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